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rdf:type
lifeskim:mentions
pubmed:issue
25
pubmed:dateCreated
2005-12-30
pubmed:abstractText
We investigate the density of states (DOS) for hole transport in undoped and doped amorphous organic films using high lateral resolution Kelvin probe force microscopy. Measurements are done on field effect transistors made of N,N1-diphenyl-N, N1-bis(1-naphthyl)-1,10-biphenyl-4,4II-diamine undoped or p doped with tetrafluoro-tetracyanoquinodimethane. We determine the DOS structure of the undoped material, including an anomalous peak related to interfaces between regions of different surface potential, the DOS doping-induced broadening, and doping-induced sharp peaks on the main DOS distribution.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Dec
pubmed:issn
0031-9007
pubmed:author
pubmed:issnType
Print
pubmed:day
16
pubmed:volume
95
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
256405
pubmed:year
2005
pubmed:articleTitle
Direct determination of the hole density of states in undoped and doped amorphous organic films with high lateral resolution.
pubmed:affiliation
Department of Physical Electronics, Tel Aviv University, Tel Aviv 69978, Israel.
pubmed:publicationType
Journal Article