Source:http://linkedlifedata.com/resource/pubmed/id/16196951
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
10
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| pubmed:dateCreated |
2005-10-3
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| pubmed:abstractText |
Calculations of mobilities have so far been carried out using approximate methods that suppress atomic-scale detail. Such approaches break down in nanoscale structures. Here we report the development of a method to calculate mobilities using atomic-scale models of the structures and density functional theory at various levels of sophistication and accuracy. The method is used to calculate the effect of atomic-scale roughness on electron mobilities in ultrathin double-gate silicon-on-insulator structures. The results elucidate the origin of the significant reduction in mobility observed in ultrathin structures at low electron densities.
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| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
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| pubmed:month |
Sep
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| pubmed:issn |
0031-9007
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| pubmed:author | |
| pubmed:issnType |
Print
|
| pubmed:day |
2
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| pubmed:volume |
95
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| pubmed:owner |
NLM
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| pubmed:authorsComplete |
Y
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| pubmed:pagination |
106802
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| pubmed:year |
2005
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| pubmed:articleTitle |
First-principles mobility calculations and atomic-scale interface roughness in nanoscale structures.
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| pubmed:affiliation |
Department of Physics, Massachusetts Institute of Technology, Cambridge, 02139, USA.
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| pubmed:publicationType |
Journal Article
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