Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
5
pubmed:dateCreated
2005-7-13
pubmed:abstractText
III-V semiconductor nanocrystals rarely exist as spherical inclusions inside glasses, due to the difficulties during their preparation, such as high toxic reagents or fast oxidation under usual glass technology temperatures. In this paper a sol-gel method for synthesis of InAs nanocrystals embedded in silica glasses was described. Gels were synthesized by the hydrolysis of a complex solution of Si(OC2H5)4, InCl3 x 4H2O, and As2O3. The gels were then heated at 200-450 degrees C in the presence of H2 gas to form fine cubic InAs crystallites. The X-ray diffraction patterns showed four strong peaks from InAs. The Raman spectrum showed InAs longitudinal-optic (233 cm(-1)) and transverseoptic modes (215 cm-(-1)). The size of InAs nanocrystals was found to be from 5 to 30 nm in diameter by transmission electron microscopy. A strong room temperature photoluminescence with peaks at 601 and 697 nm was observed from InAs nanocrystals embedded in silica glasses. The results suggest that it might be possible to synthesize other III-V semiconductor nanocrystals embedded in silica glasses through the sol-gel process.
pubmed:language
eng
pubmed:journal
pubmed:citationSubset
IM
pubmed:chemical
pubmed:status
MEDLINE
pubmed:month
May
pubmed:issn
1533-4880
pubmed:author
pubmed:issnType
Print
pubmed:volume
5
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
786-9
pubmed:dateRevised
2006-11-15
pubmed:meshHeading
pubmed:year
2005
pubmed:articleTitle
Sol-gel synthesis and photoluminescence of III-V semiconductor InAs nanocrystals embedded in silica glasses.
pubmed:affiliation
School of Chemistry & Materials Science, Shaanxi Normal University, Xi'an 710062, China.
pubmed:publicationType
Journal Article, Research Support, Non-U.S. Gov't, Evaluation Studies