Source:http://linkedlifedata.com/resource/pubmed/id/15698223
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
2
|
| pubmed:dateCreated |
2005-2-8
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| pubmed:abstractText |
We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures.
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| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
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| pubmed:month |
Jan
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| pubmed:issn |
0031-9007
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| pubmed:author | |
| pubmed:issnType |
Print
|
| pubmed:day |
21
|
| pubmed:volume |
94
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| pubmed:owner |
NLM
|
| pubmed:authorsComplete |
Y
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| pubmed:pagination |
027203
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| pubmed:year |
2005
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| pubmed:articleTitle |
Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack.
|
| pubmed:affiliation |
Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
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| pubmed:publicationType |
Journal Article
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