Source:http://linkedlifedata.com/resource/pubmed/id/15601197
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rdf:type | |
lifeskim:mentions | |
pubmed:issue |
23
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pubmed:dateCreated |
2004-12-16
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pubmed:abstractText |
The observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the [100] direction and the anisotropy of electrical conductivity.
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pubmed:language |
eng
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pubmed:journal | |
pubmed:status |
PubMed-not-MEDLINE
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pubmed:month |
Dec
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pubmed:issn |
0031-9007
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pubmed:author | |
pubmed:issnType |
Print
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pubmed:day |
3
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pubmed:volume |
93
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pubmed:owner |
NLM
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pubmed:authorsComplete |
Y
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pubmed:pagination |
237203
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pubmed:year |
2004
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pubmed:articleTitle |
Anisotropy of the magnetoresistance in Gd5Si2Ge2.
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pubmed:affiliation |
Materials and Engineering Physics Program, Ames Laboratory, Iowa State University, Ames, IA 50011-3020, USA.
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pubmed:publicationType |
Journal Article
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