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PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
10
pubmed:dateCreated
2004-4-19
pubmed:abstractText
Photoluminescence (PL) spectroscopy with subwavelength lateral resolution has been employed to probe individual localization centers in a thin InGaN/GaN quantum well. Spectrally narrow emission lines with a linewidth as small as 0.8 meV can be resolved, originating from the recombination of an electron-hole pair occupying a single localized state. Surprisingly, the individual emission lines show a pronounced blueshift when raising the temperature, while virtually no energy shift occurs for increasing excitation density. These findings are in remarkable contrast to the behavior usually found in macro-PL measurements and give a fundamental new insight into the recombination process in semiconductor nanostructures in the presence of localization and strong internal electric fields. We find clear indications for a biexciton state with a negative binding energy of about -5+/-0.7 meV.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Mar
pubmed:issn
0031-9007
pubmed:author
pubmed:issnType
Print
pubmed:day
12
pubmed:volume
92
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
106802
pubmed:year
2004
pubmed:articleTitle
Probing individual localization centers in an InGaN/GaN quantum well.
pubmed:affiliation
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
pubmed:publicationType
Journal Article