Source:http://linkedlifedata.com/resource/pubmed/id/15089225
Switch to
Predicate | Object |
---|---|
rdf:type | |
lifeskim:mentions | |
pubmed:issue |
10
|
pubmed:dateCreated |
2004-4-19
|
pubmed:abstractText |
Photoluminescence (PL) spectroscopy with subwavelength lateral resolution has been employed to probe individual localization centers in a thin InGaN/GaN quantum well. Spectrally narrow emission lines with a linewidth as small as 0.8 meV can be resolved, originating from the recombination of an electron-hole pair occupying a single localized state. Surprisingly, the individual emission lines show a pronounced blueshift when raising the temperature, while virtually no energy shift occurs for increasing excitation density. These findings are in remarkable contrast to the behavior usually found in macro-PL measurements and give a fundamental new insight into the recombination process in semiconductor nanostructures in the presence of localization and strong internal electric fields. We find clear indications for a biexciton state with a negative binding energy of about -5+/-0.7 meV.
|
pubmed:language |
eng
|
pubmed:journal | |
pubmed:status |
PubMed-not-MEDLINE
|
pubmed:month |
Mar
|
pubmed:issn |
0031-9007
|
pubmed:author | |
pubmed:issnType |
Print
|
pubmed:day |
12
|
pubmed:volume |
92
|
pubmed:owner |
NLM
|
pubmed:authorsComplete |
Y
|
pubmed:pagination |
106802
|
pubmed:year |
2004
|
pubmed:articleTitle |
Probing individual localization centers in an InGaN/GaN quantum well.
|
pubmed:affiliation |
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.
|
pubmed:publicationType |
Journal Article
|