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PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
18
pubmed:dateCreated
2003-6-5
pubmed:abstractText
The electronic structure and the nature of optical transitions in oxygen dangling bond in silica glass, the nonbridging oxygen hole center (NBOHC), were calculated. The calculation reproduced well the peak positions and oscillator strengths of the well-known optical absorption bands at 2.0 and 4.8 eV, and of the recently discovered absorption band at 6.8 eV. The 2.0 eV band was attributed to transition from the sigma bond between Si and dangling oxygen to nonbonding pi orbital on the dangling oxygen. The uniquely small electron-phonon coupling associated with the 2.0 eV transition is explained by stabilization of Si-O bond in the excited state by hyperconjugation effects.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
May
pubmed:issn
0031-9007
pubmed:author
pubmed:issnType
Print
pubmed:day
9
pubmed:volume
90
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
186404
pubmed:dateRevised
2003-11-4
pubmed:year
2003
pubmed:articleTitle
Electronic structure of oxygen dangling bond in glassy SiO2: the role of hyperconjugation.
pubmed:affiliation
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.
pubmed:publicationType
Journal Article