Linked Life Data

12764192

Source:http://linkedlifedata.com/resource/pubmed/id/12764192

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
5623
pubmed:dateCreated
2003-5-23
pubmed:abstractText
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.
pubmed:commentsCorrections
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
May
pubmed:issn
1095-9203
pubmed:author
pubmed:issnType
Electronic
pubmed:day
23
pubmed:volume
300
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
1269-72
pubmed:dateRevised
2007-3-19
pubmed:year
2003
pubmed:articleTitle
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.
pubmed:affiliation
Hosono Transparent ElectroActive Materials, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012, Japan. nomura@lucid.msl.titech.ac.jp
pubmed:publicationType
Journal Article