Source:http://linkedlifedata.com/resource/pubmed/id/12005768
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
17
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| pubmed:dateCreated |
2002-5-13
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| pubmed:abstractText |
The structure of Ge(105)-(1 x 2) grown on Si(105) is examined by scanning tunneling microscopy (STM) and first-principles calculations. The morphology evolution with an increasing amount of Ge deposited documents the existence of a tensile surface strain in Si(105) and its relaxation with increasing coverage of Ge. A detailed analysis of high-resolution STM images and first-principles calculations produce a new stable model for the Ge(105)-(1 x 2) structure formed on the Si(105) surface that includes the existence of surface strain. It corrects the model developed from early observations of the facets of "hut" clusters grown on Si(001).
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| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
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| pubmed:month |
Apr
|
| pubmed:issn |
0031-9007
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| pubmed:author | |
| pubmed:issnType |
Print
|
| pubmed:day |
29
|
| pubmed:volume |
88
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| pubmed:owner |
NLM
|
| pubmed:authorsComplete |
Y
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| pubmed:pagination |
176101
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| pubmed:dateRevised |
2003-11-3
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| pubmed:year |
2002
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| pubmed:articleTitle |
Origin of the stability of Ge(105) on si: a new structure model and surface strain relaxation.
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| pubmed:affiliation |
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
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| pubmed:publicationType |
Journal Article
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