Source:http://linkedlifedata.com/resource/pubmed/id/11909474
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| Predicate | Object |
|---|---|
| rdf:type | |
| lifeskim:mentions | |
| pubmed:issue |
12
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| pubmed:dateCreated |
2002-3-22
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| pubmed:abstractText |
By carrying out first-principles calculations on diamond-forming processes, we predict a method for the heteroepitaxial growth of diamond on cubic beta-SiC(001). In the method, we used two processes: (i) the preformation of an sp(3)-like surface configuration of beta-SiC(001) by the adsorption of group-V surfactants; (ii) the successive growth of diamond by the segregation of the surfactants onto a surface and the desorption of surface hydrogen. Analyzing the segregation energies, we found that the atomic size effect plays a crucial role in the surfactant-mediated growth of diamond on beta-SiC(001).
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| pubmed:language |
eng
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| pubmed:journal | |
| pubmed:status |
PubMed-not-MEDLINE
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| pubmed:month |
Mar
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| pubmed:issn |
0031-9007
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| pubmed:author | |
| pubmed:issnType |
Print
|
| pubmed:day |
25
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| pubmed:volume |
88
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| pubmed:owner |
NLM
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| pubmed:authorsComplete |
Y
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| pubmed:pagination |
125504
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| pubmed:dateRevised |
2003-11-3
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| pubmed:year |
2002
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| pubmed:articleTitle |
Novel pathway to the growth of diamond on cubic beta-SiC(001).
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| pubmed:affiliation |
IQUIPS, University of Seoul, 90 Jeonnong-dong, Dongdaemun-gu, Seoul 130-743, Korea.
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| pubmed:publicationType |
Journal Article
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