Linked Life Data

11298895

Source:http://linkedlifedata.com/resource/pubmed/id/11298895

Statements in which the resource exists as a subject.
PredicateObject
rdf:type
lifeskim:mentions
pubmed:issue
Pt 1
pubmed:dateCreated
2001-4-12
pubmed:abstractText
We have studied the photoluminescence properties of GaN quantum dots with submicrometre lateral resolution by means of near-field scanning optical microscopy. The instrument operated at room temperature and was implemented for near-ultra-violet spectroscopy in the illumination-mode configuration. The analysed sample consisted of several stacked planes of GaN/AlN quantum dots grown by molecular beam epitaxy on Si(111) substrate. The photoluminescence maps showed islands in the micrometre range emitting at different wavelengths, confirming the atomic force microscopy studies on the morphology of similar uncapped samples.
pubmed:language
eng
pubmed:journal
pubmed:status
PubMed-not-MEDLINE
pubmed:month
Apr
pubmed:issn
0022-2720
pubmed:author
pubmed:issnType
Print
pubmed:volume
202
pubmed:owner
NLM
pubmed:authorsComplete
Y
pubmed:pagination
212-7
pubmed:dateRevised
2003-10-31
pubmed:year
2001
pubmed:articleTitle
Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near-field optical microscopy.
pubmed:affiliation
Istituto Nazionale di Fisica della Materia, Dipartimento di Fisica and LENS, Largo E. Fermi 2, I-50125 Firenze, Italy. guccia@lens.unifi.it
pubmed:publicationType
Journal Article