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pubmed-article:21532680rdf:typepubmed:Citationlld:pubmed
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pubmed-article:21532680pubmed:issue13lld:pubmed
pubmed-article:21532680pubmed:dateCreated2011-5-2lld:pubmed
pubmed-article:21532680pubmed:abstractTextThe surface damage threshold of undoped bulk <110> GaP induced by a high repetition rate femtosecond pulse at 1040 nm with a duration of 61 fs was studied. The threshold value was obtained by a linear fit of the incident single pulse fluence and was confirmed with a breakdown test around the threshold level. The result will be useful in high intensity, high repetition rate laser applications and ultrafast processes.lld:pubmed
pubmed-article:21532680pubmed:languageenglld:pubmed
pubmed-article:21532680pubmed:journalhttp://linkedlifedata.com/r...lld:pubmed
pubmed-article:21532680pubmed:statusPubMed-not-MEDLINElld:pubmed
pubmed-article:21532680pubmed:monthMaylld:pubmed
pubmed-article:21532680pubmed:issn1539-4522lld:pubmed
pubmed-article:21532680pubmed:authorpubmed-author:FahdS DSDlld:pubmed
pubmed-article:21532680pubmed:authorpubmed-author:LiYiYlld:pubmed
pubmed-article:21532680pubmed:authorpubmed-author:LiYanfengYlld:pubmed
pubmed-article:21532680pubmed:authorpubmed-author:XingQirongQlld:pubmed
pubmed-article:21532680pubmed:authorpubmed-author:HuMinglieMlld:pubmed
pubmed-article:21532680pubmed:authorpubmed-author:ChaiLuLlld:pubmed
pubmed-article:21532680pubmed:authorpubmed-author:WangChingyueClld:pubmed
pubmed-article:21532680pubmed:issnTypeElectroniclld:pubmed
pubmed-article:21532680pubmed:day1lld:pubmed
pubmed-article:21532680pubmed:volume50lld:pubmed
pubmed-article:21532680pubmed:ownerNLMlld:pubmed
pubmed-article:21532680pubmed:authorsCompleteYlld:pubmed
pubmed-article:21532680pubmed:pagination1958-62lld:pubmed
pubmed-article:21532680pubmed:year2011lld:pubmed
pubmed-article:21532680pubmed:articleTitleExperimental study on GaP surface damage threshold induced by a high repetition rate femtosecond laser.lld:pubmed
pubmed-article:21532680pubmed:affiliationUltrafast Laser Laboratory, College of Precision Instrument and Optoelectronics Engineering, Key Laboratory of Opto-Electronics Information and Technical Science, Ministry of Education, Tianjin University, Tianjin 300072, China.lld:pubmed
pubmed-article:21532680pubmed:publicationTypeJournal Articlelld:pubmed