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rdf:type |
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|
lifeskim:mentions |
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pubmed:issue |
24
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pubmed:dateCreated |
2009-12-9
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pubmed:abstractText |
High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.
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pubmed:language |
eng
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pubmed:journal |
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pubmed:citationSubset |
IM
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pubmed:chemical |
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pubmed:status |
MEDLINE
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pubmed:month |
Nov
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pubmed:issn |
1094-4087
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pubmed:author |
pubmed-author:BrimontAA,
pubmed-author:DonsRR,
pubmed-author:DumonPP,
pubmed-author:FedeliJ MJM,
pubmed-author:GarberH JHJ,
pubmed-author:KraussT FTF,
pubmed-author:Marris-MoriniDD,
pubmed-author:MartíJJ,
pubmed-author:O'FaolainLL,
pubmed-author:RasigadeGG,
pubmed-author:ReedG TGT,
pubmed-author:SanchisPP,
pubmed-author:VivierPP
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pubmed:issnType |
Electronic
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pubmed:day |
23
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pubmed:volume |
17
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pubmed:owner |
NLM
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pubmed:authorsComplete |
Y
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pubmed:pagination |
21986-91
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pubmed:meshHeading |
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pubmed:year |
2009
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pubmed:articleTitle |
High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode.
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pubmed:affiliation |
Advanced Technology Institute, University of Surrey Guildford, Surrey, UK. F.gardes@surrey.ac.uk
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pubmed:publicationType |
Journal Article,
Research Support, Non-U.S. Gov't
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